ksh200 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksh200 rev. b0 1 august 2010 ksh200 npn epitaxial silicon transistor features ? d-pak for surface mount applications ? high dc current gain ? lead formed for surface mount applications (no suffix) ? straight lead (i-pak, ? - i ? suffix) absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% pulsed symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 8 v i c collector current (dc) 5 a i cp collector current (pulse) 10 a i b base current 1 a p c collector dissipation (t c = 25c) 12.5 w collector dissipation (t a = 25c) 1.4 w t j junction temperature 150 c t stg storage temperature -55 to 150 c symbol parameter conditions min. max. units bv ceo (sus) * collector emitter sustaining voltage i c = 100ma, i b = 0 25 v i cbo collector cut-off current v cb = 40v, i e = 0 100 na i ebo emitter cut-off current v eb = 8v, i c = 0 100 na h fe * dc current gain v ce = 1v, i c = 500ma v ce = 1v, i c = 2a v ce = 2v, i c = 5a 70 45 10 180 v ce (sat) * collector-emitter saturation voltage i c = 500ma, i b = 50ma i c = 2a, i b = 200ma i c = 5a, i b = 1a 0.3 0.75 1.8 v v v v be (sat) * base-emitter saturation voltage i c = 5a, i b = 1a 2.5 v v be (on) * base-emitter on voltage v ce = 1v, i c = 2a 1.6 v f t current gain bandwidth product v ce = 10v, i c = 100ma 65 mhz c ob output capacitance v cb = 10v, i e = 0, f = 0.1mhz 80 pf 1.base 2.collect or 3.emitter d-pak i-pak 11
ksh200 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksh200 rev. b0 2 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. collector output capa citance figure 4. turn on time figure 5. turn off time figur e 6. safe operating area 0.01 0.1 1 10 1 10 100 1000 v ce =2v v ce =1v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 v c e ( s a t ) v be (sat) i c =10i b v ce (sat), v be (sat) [v], saturation voltage i c [a], collector current 0.1 1 10 100 1 10 100 1000 c ob [pf], capacitance v cb [v], collector base voltage 0.01 0.1 1 10 0.01 0.1 1 10 t d t r v cc =30v i c =10i b t r ,t d [ns], turn on time i c [a], collector current 0.01 0.1 1 10 10 100 1000 t f t stg v cc =30v i c =10i b i b1 =-i b2 t stg ,t f [ns], turn off time i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 100 d c 5m s 1 ms 5 0 0 s 100 s i c [a], collector current v ce [v], collector-emitter voltage
ksh200 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksh200 rev. b0 3 typical performance characteristics (continued) figure 7. power derating 0 25 50 75 100 125 150 175 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 p c [w], power dissipation t c [ o c], case temperature
ksh200 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksh200 rev. b0 4 physical dimensions 6.60 0.20 2.30 0.1 0 0.50 0.1 0 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.1 0 1.02 0.2 0 2.30 0.2 0 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak dimensions in millimeters
ksh200 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksh200 rev. b0 5 physical dimensions (continued) 6.60 0.20 0.76 0.10 max0.96 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] 0.60 0.20 0.80 0.10 1.80 0.20 9.30 0.30 16.10 0.30 6.10 0.20 0.70 0.20 5.34 0.20 0.50 0.10 0.50 0.1 0 2.30 0.20 (0.50) (0.50) (4.34) i-pak dimensions in millimeters
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